LASER OSCILLATION INVOLVING NITROGEN ISOELECTRONIC IMPURITIES IN INDIRECT-GAP AL_XGA_1-XAS (X=0.46, 2 K).GONDA S; MAKITA Y; IJUIN H et al.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 29; NO 11; PP. 703-704; BIBL. 12 REF.Article

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